薄膜晶体管
有机发光二极管
材料科学
晶体管
有机电子学
光电子学
分析化学(期刊)
纳米技术
电气工程
化学
电压
图层(电子)
有机化学
工程类
作者
Thomas Riedl,Patrick Görrn,Wolfgang Kowalsky
标识
DOI:10.1109/jdt.2009.2023093
摘要
Transparent thin-film-transistors (TFTs) with a channel semiconductor based on the zinc-tin-oxide (ZTO) system are presented. Specifically, the technological and material aspects of the plasma-assisted pulsed laser deposition of these materials are discussed. The supply of additional radical oxygen species will be evidenced to significantly reduce defects in the material and as a consequence allows for well-behaved n-channel TFTs with mobilities higher than 10 cm 2 V -1 s -1 and a threshold voltage in the range of 0 V. In addition the devices are extremely stable versus bias/current stress, which is especially important for active matrix OLED applications. Based on a detailed understanding of the interaction of the TFT channels with oxygen a strategy for the thin-film encapsulation of the TFTs will be presented, which leaves their device characteristics unaffected.
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