单片微波集成电路
噪声系数
电气工程
低噪声放大器
高电子迁移率晶体管
放大器
物理
电容器
噪音(视频)
光电子学
功率增益
Ku波段
晶体管
计算机科学
工程类
CMOS芯片
电压
人工智能
图像(数学)
作者
M Laxmi,S Karthik,H Nagaveni
标识
DOI:10.1109/imarc49196.2021.9714656
摘要
This paper describes the design and development of InGaAs pHEMT process based high gain, low noise monolithic self-biased amplifier for upper Ku band applications. A four stage self-biased cascaded common source inductive feedback technique has been used to achieve the specifications. This LNA features $\mathbf{3 0}\mathbf{d B}$ gain, typical noise Figure of $1.3\mathrm{~dB}$ over the frequency band and 10dBm of OP1dB. It has on chip DC blocking capacitors at RF input and output ports. It operates on $3\mathrm{~V}$ single supply with a low power consumption of $255\mathrm{~mW}$, having $3.0\mathrm{~mm} \ \mathrm{X} \ 1.5\mathrm{~mm} \ \mathrm{X} \ 0.1\mathrm{~mm}$ form factor.
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