CMOS芯片
可制造性设计
灵活性(工程)
计算机科学
计算机体系结构
还原(数学)
电子工程
电效率
逻辑门
嵌入式系统
工程类
功率(物理)
电气工程
数学
量子力学
统计
几何学
物理
作者
Shien-Yang Wu,Yeong‐Hwa Chang,M.C. Chiang,C.Y. Lin,J.J. Liaw,Jiang-Hong Cheng,J.-Y. Yeh,H.F. Chen,Shau‐Feng Chang,K.T. Lai,M.S. Liang,K.H. Pan,Jinke Chen,Vencent Chang,Tseng-Chin Luo,Xuye Wang,Y. S. Mor,Cheng-Piao Lin,S.H. Wang,Ming-Hang Hsieh
标识
DOI:10.1109/iedm45625.2022.10019498
摘要
The industry fastest time-to-manufacturability 3nm CMOS platform technology is presented. FinFlex™ with standard cells consisting of different fin configurations is introduced for the first time to offer the critical design flexibility for better power efficiency and performance optimization compared to traditional FinFET technologies. An aggressive scaling of ~1.6X logic density increase, 18% speed improvement and 34% power reduction are achieved over our previous 5nm CMOS process. This FinFlex™ platform technology provides the best-in-class PPAC values to fully unleash product innovations in 5G and HPC applications.
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