Berry curvature induced anomalous Hall conductivity in the magnetic topological oxide double perovskite Sr2FeMoO6

Oxide materials exhibit several structural, magnetic, and electronic properties. Their stability under ambient conditions, easy synthesis, and high transition temperatures provide such systems with an ideal ground for realizing topological properties and real-life technological applications. However, experimental evidence of topological states in oxide materials is rare. In this paper, we have synthesized single crystals of oxide double perovskite ${\mathrm{Sr}}_{2}{\mathrm{FeMoO}}_{6}$ and revealed its topological nature by investigating its structural, magnetic, and electronic properties. We observed that the system crystallized in the cubic space group $Fm\overline{3}m$, which is a half-metallic ferromagnet. Transport measurements show an anomalous Hall effect (AHE), and it is evident that the Hall contribution originates from the Berry curvature. Assuming a shift of the Fermi energy toward the conduction band, the contribution of the AHE is enhanced owing to the presence of a gapped nodal line. This paper can be used to explore and realize the topological properties of bulk oxide systems.