Comparison of switching performance of high-speed GaN vertical MOSFETs with various gate structures based on TCAD simulation

Abstract To evaluate the impact of gate structures on the switching performance ( R on Q g ) and cost (required chip size, proportional to R on A ) of GaN vertical MOSFETs, we calculated the R on AR on Q g of trench-gate structures with and without a countermeasure to reduce the electric field applied to the gate insulator, as well as a planar structure with various cell pitches, channel mobilities, and blocking voltages. When the blocking voltage was 600 V, the planar-gate structure achieved the lowest R on AR on Q g owing to its low Q g / A , despite the high R on A . However, when the blocking voltage was 1800 V, a trench-gate structure without the countermeasure achieved the lowest R on AR on Q g owing to its low R on A and optimal cell pitch. The R on AR on Q g of a trench-gate structure with a countermeasure and planar-gate structure became close with increasing channel mobility. This indicates that high channel mobility is the most important factor, rather than the selection of the device structure.