钙钛矿(结构)
材料科学
非阻塞I/O
氧化镍
氧化锡
结晶
氧化物
化学工程
光电子学
冶金
催化作用
生物化学
化学
工程类
作者
Weihai Zhang,Heng Liu,Tengcheng Huang,Lirui Kang,Jing Ge,Hui Li,Xia Zhou,Wenjun Zhang,Tingting Shi,Hsing‐Lin Wang
标识
DOI:10.1002/adma.202414125
摘要
Abstract Nickel oxide (NiO x ) is considered as a potential hole transport material in the fabrication of lead‐tin (Pb‐Sn) perovskite solar cells (PSCs) for tandem applications. However, the energy level mismatch and unfavorable redox reactions between Ni ≥3+ species and Sn 2+ at the NiO x /perovskite interface pose challenges. Herein, high‐performance Pb‐Sn‐based inorganic PSCs are demonstrated by modulating the NiO x /perovskite interface with a multifunctional 4‐aminobenzenesulfonic acid (4‐ABSA) interlayer. The 4‐ABSA interlayer induces the formation of an oriented dipole moment directed from NiO x to perovskite, effectively elevating the valance band maximum of the NiO x film, thus balancing the energy level difference and promoting charge carrier extraction of the device. Moreover, the 4‐ABSA molecules interact with both NiO x and perovskite, suppressing the reaction of highly active Ni ≥3+ species with perovskites while regulating perovskite crystallization. This results in perovskite films with reduced defect density and enlarged grains. Consequently, a remarkable device efficiency of 17.4% is obtained, representing the highest reported value for Pb‐Sn‐based inorganic PSCs thus far. Furthermore, the 4‐ABSA interlayer enhances the UV‐radiation and operational stability of the resulting devices, maintaining over 80% and 90% of the initial efficiency after 240 h of UV‐light exposure and 480 h of 1 sun illumination, respectively.
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