Insulated gate unipolar diode

Abstract Here, for the first time, a gated diode that can be turned on/off by its single insulated gate is introduced. The novel device is a combination of a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) and a diode. It has a simple structure and can be fabricated by the regular complementary metal‐oxide‐semiconductor (CMOS) technology at low cost. The insulated‐gate unipolar diode (IGUD) is simulated by device simulator tools. Simulations show the output curve of the IGUD is not only similar to a regular diode but also can be shifted by the gate. The idea of IGUD has been evaluated by experimental tests. The experimental data are in good agreement with the simulation results. The IGUD can be used as a fast switch in high‐current low‐voltage applications. Also, it can be used to achieve controlled rectification without synchronisation to the AC input.