电导率
兴奋剂
材料科学
退火(玻璃)
光致发光
浅层供体
热导率
分析化学(期刊)
电阻率和电导率
离子注入
锗
深能级瞬态光谱
电离能
电离
光电子学
离子
硅
化学
冶金
物理化学
复合材料
电气工程
有机化学
色谱法
工程类
作者
Pegah Bagheri,Cristyan Quiñones-García,Dolar Khachariya,James Loveless,Yan Guan,Shashwat Rathkanthiwar,Pramod Reddy,Ronny Kirste,Seiji Mita,James Tweedie,Ramón Collazo,Zlatko Sitar
摘要
Highly conductive Ge-doped AlN with conductivity of 0.3 (Ω cm)−1 and electron concentration of 2 × 1018 cm−3 was realized via a non-equilibrium process comprising ion implantation and annealing at a moderate thermal budget. Similar to a previously demonstrated shallow donor state in Si-implanted AlN, Ge implantation also showed a shallow donor behavior in AlN with an ionization energy ∼80 meV. Ge showed a 3× higher conductivity than its Si counterpart for a similar doping level. Photoluminescence spectroscopy indicated that higher conductivity for Ge-doped AlN was achieved primarily due to lower compensation. This is the highest n-type conductivity reported for AlN doped with Ge to date and demonstration of technologically useful conductivity in Ge-doped AlN.
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