Low‐Temperature Plasma‐Assisted Growth of Large‐Area MoS2 for Transparent Phototransistors

Abstract MoS 2 ‐based transparent electronics can revolutionize the state‐of‐the‐art display technology. The low‐temperature synthesis of MoS 2 below the softening temperature of inexpensive glasses is an essential requirement, although it has remained a long persisting challenge. In this study, plasma‐enhanced chemical vapor deposition is utilized to grow large‐area MoS 2 on a regular microscopic glass (area ≈27 cm 2 ). To benefit from uniform MoS 2 , 7 × 7 arrays of top‐gated transparent (≈93% transparent at 550 nm) thin film transistors (TFTs) with Al 2 O 3 dielectric that can operate between −15 and 15 V are fabricated. Additionally, the performance of TFTs is assessed under irradiation of visible light and estimated static performance parameters, such as photoresponsivity is found to be 27 A W −1 (at λ = 405 nm and an incident power density of 0.42 mW cm −2 ). The stable and uniform photoresponse of transparent MoS 2 TFTs can facilitate the fabrication of transparent image sensors in the field of optoelectronics.