Extraction, chemical, and dual-functional memory and threshold resistive switching characteristics of Elaeodendron buchananii extract

This work presents a study on the electrical properties of plant materials, which is a fascinating area of research. These materials show promising potential in mitigating the exponential increase in electronic waste by enabling the development of eco-friendly electronic devices that can biodegrade. This research article showcases findings on the extraction, chemical analysis, and dual-functional memory and threshold resistive switching of extracts from the Elaeodendron buchananii plant. We report threshold switching with impressive ON/OFF ratio of >103, a retention time of ≥103, and endurance of 20 cycles, for the sandwich type device consisting of Elaeodendron buchananii plant extract-based film positioned between silver and indium-doped tin oxide electrodes. After modifying the experimental parameters, specifically by reducing the voltage scan increments to 1mV and increasing the compliance current to 150μA, transition from threshold switching to bipolar memory mode was detected. This particular memory mode exhibited an ON/OFF ratio of 10 and demonstrated very low switching voltages of −0.37V and +0.22V, although for only a limited number of write/erase cycles. The switching mechanism for both the threshold and memory mode can be attributed to the formation of conductive filaments caused by the migration of oxygen vacancies.