碳纳米管                        
                
                                
                        
                            锗                        
                
                                
                        
                            材料科学                        
                
                                
                        
                            硒化物                        
                
                                
                        
                            异质结                        
                
                                
                        
                            密度泛函理论                        
                
                                
                        
                            范德瓦尔斯力                        
                
                                
                        
                            电子传输链                        
                
                                
                        
                            电导                        
                
                                
                        
                            凝聚态物理                        
                
                                
                        
                            电子                        
                
                                
                        
                            纳米技术                        
                
                                
                        
                            计算化学                        
                
                                
                        
                            化学                        
                
                                
                        
                            光电子学                        
                
                                
                        
                            物理                        
                
                                
                        
                            分子                        
                
                                
                        
                            硒                        
                
                                
                        
                            硅                        
                
                                
                        
                            有机化学                        
                
                                
                        
                            冶金                        
                
                                
                        
                            量子力学                        
                
                                
                        
                            生物化学                        
                
                        
                    
            作者
            
                Yuliang Mao,Zhipeng Huang            
         
                    
        
    
            
            标识
            
                                    DOI:10.1016/j.rinp.2023.106835
                                    
                                
                                 
         
        
                
            摘要
            
            Based on density functional theory (DFT) and non-equilibrium Green's function (NEGF) method, we studied the electron transport properties of van der Waals heterostructures (vdWHs) composed by (n,0) single-walled carbon nanotubes (SWCNTs) (n=5-11) and two-dimensional germanium selenide (2D GeSe). The (n,0)SWCNT/GeSe vdWHs (n=5-11) display distinct electron transport properties which can be tuned by the variation of diameter in SWCNTs. The results of the I-V characteristic curves show that the conductance of the (n,0)SWCNT/GeSe vdWHs (n=7-9,11) are improved after the integration of (n,0)SWCNT (n=7-9,11) with 2D GeSe. The current in (9,0)SWCNT/GeSe vdWH shows a quite high conductance, which can reach 100 μA under 1.5 V bias. The obtained transmission spectra under bias reveals the tendency of electrons and holes in participating the transport of (n,0)SWCNT/GeSe vdWHs (n=5-11).
         
            
 
                 
                
                    
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