记忆电阻器
材料科学
X射线光电子能谱
透射电子显微镜
纳米技术
计算机科学
光电子学
电子工程
物理
核磁共振
工程类
作者
Ya Lin,Fanqi Meng,Tao Zeng,Qinghua Zhang,Zhongqiang Wang,Yankun Cheng,Xiaoning Zhao,Lin Gu,Haiyang Xu,Yichun Liu
标识
DOI:10.1002/adfm.202302787
摘要
Abstract Direct observation of oxygen dynamics in an oxide‐based second‐order memristor can provide the valid evidence to clarify the memristive mechanism, however, which is still limited for now. In this study, the migration and diffusion of oxygen ions in the region of Pt/WO 3‐x Schottky interface are observed in the WO 3‐x second‐order memristor by using the technique of in situ transmission electron microscopy (TEM) and the electron energy loss spectroscopy. Interestingly, the coexistence of memristive and memcapacitive switching can be implemented in this memristor. Combined with the analysis of depth‐profile X‐ray photoelectron spectroscopy (XPS), an interface‐barrier‐modulation second‐order memristive model is proposed based on the above results. Notably, temporally correlative oxygen dynamics in the memristor offers the platform to integrate signals from multiple inputs, enabling the realization of the dendritic functions of synchronous and asynchronous integration for the application of logic operations with fault‐tolerance capability and associative learning. These findings provide the experimental evidence to in‐depth understanding of oxygen dynamics and switching mechanism in second‐order memristor, which can support the optimization of memristive performance and the achievement of biorealistic synaptic functions.
科研通智能强力驱动
Strongly Powered by AbleSci AI