材料科学
电阻器
光电子学
电容器
放大器
模拟前端
晶体管
带宽(计算)
电气工程
电子工程
计算机科学
电压
CMOS芯片
工程类
电信
作者
Runxiao Shi,Xuchi Liu,Tengteng Lei,Lei Lü,Zhihe Xia,Man Wong
标识
DOI:10.1002/advs.202207683
摘要
Abstract The application of a versatile, low‐temperature thin‐film transistor (TFT) technology is presently described as the implementation on a flexible substrate of an analog front‐end (AFE) system for the acquisition of bio‐potential signals. The technology is based on semiconducting amorphous indium‐gallium‐zinc oxide (IGZO). The AFE system consists of three monolithically integrated constituent components: a bias‐filter circuit with a bio‐compatible low cut‐off frequency of ≈1 Hz, a 4‐stage differential amplifier offering a large gain‐bandwidth product of ≈955 kHz, and an additional notch filter exhibiting over 30 dB suppression of the power‐line noise. Respectively built using conductive IGZO electrodes with thermally induced donor agents and enhancement‐mode fluorinated IGZO TFTs with exceptionally low leakage current, both capacitors and resistors with significantly reduced footprints are realized. Defined as the ratio of the gain‐bandwidth product of an AFE system to its area, a record‐setting figure‐of‐merit of ≈86 kHz mm −2 is achieved. This is about an order of magnitude larger than the < 10 kHz mm −2 of the nearest benchmark. Requiring no supplementary off‐substrate signal‐conditioning components and occupying an area of ≈11 mm 2 , the stand‐alone AFE system is successfully applied to both electromyography and electrocardiography (ECG).
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