Endogenous MoC/Mo 2 C Nanoscale Heterostructures Confined in Hollow Porous Carbon Spheres Toward Sodium‐Ion Capacitors

材料科学 纳米尺度 球体 电容器 多孔性 碳纤维 离子 异质结 化学工程 纳米技术 复合材料 光电子学 复合数 电压 冶金 有机化学 电气工程 物理 工程类 化学 天文
作者
Minyu Jia,Hao Jiang,Jiale Jia,Jinfen Sun,Linrui Hou,Jianlin Deng,Changzhou Yuan
出处
期刊:Advanced Energy Materials [Wiley]
卷期号:15 (37) 被引量:13
标识
DOI:10.1002/aenm.202503529
摘要

Abstract Transition metal carbides (TMCs) are considered highly promising anode materials for sodium‐ion capacitors (SICs) due to their intrinsic high electrical conductivity and stability. However, severe agglomeration and significant volume expansion over electrochemical sodium‐storage lead to the inactivation of active sites and structural collapse, thereby causing inferior electrochemical performance. For this, a double‐layered carbon coating involved a templating strategy is devised to in situ fabricate endogenous MoC/Mo 2 C nanoscale heterostructures confined in hollow porous carbon spheres (MoC/Mo 2 C@HPC) toward SICs. The solid‐solution charge‐storage mechanism is rationally put forward for MoC/Mo 2 C@HPC. Moreover, a global “refining‐recombination” process involved nanoparticles (NPs) refinement occurs during prolonged cycling of MoC/Mo 2 C, inducing a gradual increase in graphitical degree of the surrounded nano‐graphite domains, which results in an “abnormal progressive growth” in capacity. The boosted extrinsic pseudo‐capacitance behavior, NPs refinement induced abundant active sur‐/interfaces, and the built‐in electric field within nano heterostructures, as authenticated by comprehensive physicochemical characterizations and theoretical simulation calculation, synergistically guarantee efficient sodium‐storage of the MoC/Mo 2 C@HPC anode. Benefiting from these appealing structural/compositional merits, the assembled MoC/Mo 2 C@HPC‐based SICs, exhibit remarkable energy density along with exceptional cycle life. More essentially, the contribution here provides fundamental insights into precise phase regulation and structural design of TMCs toward advanced next‐generation SICs.
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