真延时
群时延和相位时延
CMOS芯片
电容
埃尔莫尔延迟
电感
数学
电子工程
拓扑(电路)
计算机科学
电气工程
带宽(计算)
算法
延迟计算
物理
工程类
电信
传播延迟
电压
量子力学
相控阵
天线(收音机)
电极
作者
Xiangyu Meng,Wang Xie,C.H. Chen,Baoyong Chi
标识
DOI:10.1109/tmtt.2024.3355945
摘要
A novel true time delay (TTD) line with three-loop inductor coupling structure is proposed in this article. This approach effectively reduces the delay cell area and increases the inductance, thereby providing a larger configurable delay range within a limited chip area. By adjusting the electrical length of the inner delay cells while maintaining impedance matching, fine delay resolution and delay flatness are achieved. The proposed true time delay line is implemented in a 65-nm CMOS technology with a frequency bandwidth of 1–11 GHz, providing a maximum delay of 106.7 ps with a delay step of 4.85 ps. The measured group delay rms error is less than 4.6 ps, with less than 2 ps in the frequency range of 2–9 GHz. The maximum delay variation is only 6.1% at each frequency point and remains below 5% for all delay settings above 2 GHz. The loss variation is less than $\pm$ 0.8 dB for the same switched resistor setting. The compact core area of the circuit is 0.27 $\times$ 1.46 mm $^{2}$ .
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