High-Performance Gate-all-around Junctionless Vertical-Channel Transistors with the Ultra-low Sub-threshold Swing for Next-generation 4F2 DRAM

In this paper, we have successfully fabricated the junction-less GAA VCT combined with a hexagonal capacitor to realize a compact 4F ² DRAM architecture. It shows the breakthroughs of I on /I off >10 ⁹ and SS=62.5 mV/dec. We also elaborated on various key process issues and device parameters and how they impact on performance.