电子迁移率
材料科学
杂质
位错
大气温度范围
外延
霍尔效应
凝聚态物理
兴奋剂
散射
声子散射
电子
Crystal(编程语言)
声子
分析化学(期刊)
电阻率和电导率
化学
光电子学
纳米技术
光学
物理
热力学
有机化学
图层(电子)
量子力学
色谱法
计算机科学
程序设计语言
作者
Shota Kaneki,Taichiro Konno,Takeshi Kimura,Kazutaka Kanegae,Jun Suda,Hajime Fujikura
摘要
Impact of carbon impurities on the electrical properties of lightly doped n-type GaN [electron concentration ∼(1–2)×1015 cm−3 at room temperature] was investigated using temperature-dependent Hall effect measurements. GaN crystals with a threading dislocation density of (1–3)×106 cm−2 were grown by our originally developed quartz-free hydride vapor phase epitaxy method, which enabled the background Si, O, and C concentrations to be suppressed to below the mid-1014 cm−3 range. We prepared three samples with different C concentrations ([C]) by intentional C doping. The C incorporation induced severe mobility collapse at temperatures greater than 60 K, where the measured mobility decreased and deviated from the theoretical value as [C] increased. The mobility collapse was eliminated for the purest GaN crystal with [C] ∼1.4×1014 cm−3, exhibiting a record high room-temperature mobility of 1480 cm2/(V·s), as well as a record high maximum mobility of 14 300 cm2/(V·s) at 62 K. The latter was almost double the previous record. We found that the overall mobility behavior can be well reproduced by adding an empirical [C]-dependent mobility component expressed as μUNK=K/TnUNK with 1≤nUNK≤2 and K∝C−1 to the conventional mobility theory (phonon and impurity scattering). Although the mechanism of the component remains uncertain, our findings provide insight into the unsolved issue of mobility collapse.
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