记忆电阻器
神经形态工程学
计算机科学
电子工程
电阻随机存取存储器
计算机体系结构
横杆开关
功率(物理)
电气工程
工程类
人工神经网络
人工智能
电压
物理
量子力学
作者
Zhipeng Xia,Xiao Wei Sun,Zhenlong Wang,Jialin Meng,Biaobing Jin,Tianyu Wang
标识
DOI:10.1007/s40820-025-01705-4
摘要
Abstract As an emerging memory device, memristor shows great potential in neuromorphic computing applications due to its advantage of low power consumption. This review paper focuses on the application of low-power-based memristors in various aspects. The concept and structure of memristor devices are introduced. The selection of functional materials for low-power memristors is discussed, including ion transport materials, phase change materials, magnetoresistive materials, and ferroelectric materials. Two common types of memristor arrays, 1T1R and 1S1R crossbar arrays are introduced, and physical diagrams of edge computing memristor chips are discussed in detail. Potential applications of low-power memristors in advanced multi-value storage, digital logic gates, and analogue neuromorphic computing are summarized. Furthermore, the future challenges and outlook of neuromorphic computing based on memristor are deeply discussed.
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