钝化
材料科学
铅(地质)
锡
钙钛矿(结构)
卤化物
光电子学
晶体管
纳米技术
化学工程
图层(电子)
无机化学
冶金
化学
电压
电气工程
地貌学
地质学
工程类
作者
I‐Hsiang Chao,Yu‐Ting Yang,Ming‐Hsuan Yu,Chiung‐Han Chen,Chwenhaw Liao,Bi‐Hsuan Lin,I‐Chih Ni,Wen‐Chang Chen,Anita Ho‐Baillie,Chu‐Chen Chueh
出处
期刊:Small
[Wiley]
日期:2023-02-15
卷期号:19 (20)
被引量:16
标识
DOI:10.1002/smll.202207734
摘要
Two-dimensional (2D) tin (Sn)-based perovskites have recently received increasing research attention for perovskite transistor application. Although some progress is made, Sn-based perovskites have long suffered from easy oxidation from Sn2+ to Sn4+ , leading to undesirable p-doping and instability. In this study, it is demonstrated that surface passivation by phenethylammonium iodide (PEAI) and 4-fluorophenethylammonium iodide (FPEAI) effectively passivates surface defects in 2D phenethylammonium tin iodide (PEA2 SnI4 ) films, increases the grain size by surface recrystallization, and p-dopes the PEA2 SnI4 film to form a better energy-level alignment with the electrodes and promote charge transport properties. As a result, the passivated devices exhibit better ambient and gate bias stability, improved photo-response, and higher mobility, for example, 2.96 cm2 V-1 s-1 for the FPEAI-passivated films-four times higher than the control film (0.76 cm2 V-1 s-1 ). In addition, these perovskite transistors display non-volatile photomemory characteristics and are used as perovskite-transistor-based memories. Although the reduction of surface defects in perovskite films results in reduced charge retention time due to lower trap density, these passivated devices with better photoresponse and air stability show promise for future photomemory applications.
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