宽禁带半导体
半导体
带隙
材料科学
光电子学
半导体器件
半导体材料
领域(数学)
硅
工程物理
物理
纳米技术
数学
纯数学
图层(电子)
作者
Mohamed Torky,T. Paul Chow
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2024-05-01
卷期号:14 (5)
被引量:1
摘要
Designing high voltage superjunction (SJ) power devices with wide bandgap and extreme bandgap semiconductors, when compared to silicon, can enhance the trade-off between RON,sp and BV significantly, due to their >10× higher avalanche breakdown electric field. Nevertheless, because of the difference in the breakdown field profile and ionization path length, the effective breakdown field for these semiconductor SJ devices has not been determined theoretically. Consequently, we estimate and compare the effective critical breakdown electric field for SJ device structures in Si, 4H–SiC, 2H–GaN, β-Ga2O3, diamond, and AlN using Technology Computer Aided Design TCAD simulation. We also establish its dependence on the SJ devices’ structural parameters, such as the pillar thickness. Furthermore, we also quantitatively compare the on-state performance of these SJ devices, including their thermal capabilities, using a paramount figure-of-merit to underscore the potential improvement possible.
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