Intrinsically enhanced anomalous Hall conductivity and Hall angle in Sb-doped magnetic Weyl semimetal Co3Sn2S2

The emerging magnetic topological materials bring a new opportunity to obtain giant transverse transport effects. In this work, a greatly enhanced anomalous Hall effect (AHE) is obtained in electron-doped magnetic Weyl semimetal Co3Sn2−xSbxS2, showing a maximum anomalous Hall conductivity (AHC) of ∼1600 Ω−1 cm−1 and an anomalous Hall angle of ∼26%. Based on the qualitative and quantitative analysis of scaling models, the enhanced AHC comes from the intrinsic mechanism related to the Berry curvature of the topological band structures. A small amount of electron doping still makes the EF around the gapped nodal rings. At the same time, disorder doping leads to the splitting and broadening of bands, which enhance the Berry curvature and intrinsic AHC. Our work provides an important guidance for the design and development of large AHE in magnetic topological materials.