激子
光致发光
双层
材料科学
拉曼光谱
解耦(概率)
带隙
光电子学
激发
自发辐射
分子物理学
凝聚态物理
光学
物理
化学
激光器
工程类
控制工程
量子力学
生物化学
膜
作者
Xiaowen Hu,Mingming Yang,Yufan Zhang,Heng Wu,Zhengkang Yu,Qi Guo,Ying Wang,Rongjuan Cong,Baolai Liang,Xiaoli Li
出处
期刊:Optics Express
[The Optical Society]
日期:2022-10-03
卷期号:30 (21): 38492-38492
摘要
Study of exciton recombination process is of great significance for the optoelectronic device applications of two-dimensional transition metal chalcogenides (TMDCs). This research investigated the decoupling MoS2 structures by photoluminescence (PL) measurements. First, PL intensity of the bilayer MoS2 (BLM) is about twice of that of the single layer MoS2 (SLM) at low temperature, indicating no transition from direct bandgap to indirect bandgap for BLM due to the decrease of interlayer coupling which can be shown by Raman spectra. Then, the localized exciton emission appears for SLM at 7 K but none for BLM, showing different exciton localization characteristics. The PL evolution with respect to the excitation intensity and the temperature further reveal the filling, interaction, and the redistribution among free exciton states and localized exciton states. These results provide very useful information for understanding the localized states and carrier dynamics in BLM and SLM.
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