Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

Si nanowires (NWs) can be used as the visible and near-infrared absorption layer in SiC/SiNWs/graphene heterostructure to solve the problem that SiC optoelectronic devices cannot be operated by visible and near-infrared lights. In this paper, Si NWs are prepared on 4H-SiC substrate by using the Au-catalyzed chemical vapor deposition. The SiNWs on 4H-SiC have the polycrystalline structure with a preferred growth orientation of . The SiC/SiNWs/graphene heterostructure exhibits good photoelectric performance, with a VIS-NIR illumination of 0.1W/cm2, the photocurrent and the open-circuit voltage are Jph=4.27nA and VOC=0.035V, respectively.