Narrow Bandgap Pb–Sn Perovskites/InGaZnO Hybrid Phototransistors for Near‐Infrared Detection

Inorganic–organic hybrid perovskite thin films have attracted significant attention for developing new types of optoelectronic devices due to their superb optoelectronic properties. Herein, a hybrid phototransistor for near‐infrared (NIR) detection is constructed by capping a narrow bandgap Pb–Sn perovskite layer on top of an indium gallium zinc oxide (IGZO) thin‐film transistor (TFT), with a C 60 interlayer acting as the electron transporting layer. The Pb–Sn perovskite layer is precisely spin patterned onto the IGZO TFTs' channel region via a hydrophobic perfluoro(1‐butenyl vinyl ether) (CYTOP) photolithography process. In this configuration, a high‐detectivity (2.24 × 10 10 Jones at 900 nm) perovskite–C 60 –IGZO hybrid infrared phototransistor is achieved, and the narrow bandgap perovskite–IGZO hybrid phototransistor has a sensitive photoresponse down to 1100 nm.