Silicon carbide nanowire covered by vertically oriented graphene for enhanced electromagnetic wave absorption performance

Abstract Silicon carbide nanowires (SiC NWs) covered by vertically oriented graphene (SiC@graphene) is prepared by a chemical vapor deposition method. As a microwave absorber, SiC@graphene exhibits a minimum reflection loss (RL) of −16.2 dB at the thickness of 2.5 mm with an absorption bandwidth of 2.64 GHz (RL