FAR INFRARED PHOTO DETECTOR BASED ON ELECTROMAGNETICALLY INDUCED TRANSPARENCY

In this paper, we design a room temperature long wavelength quantum dot infrared photo detector (QDIP) by considering the principle of electromagnetically induced transparency (EIT) in a nanocrystal composed of a spherical GaAs quantum dot (QD) embedded in InAs . It is shown that the presence of long wavelength infrared (IR) signal in the medium affects on the absorption of visible optical probe (λ p ) in proposed photo detector. The far IR wavelength (λ F I R ) can be tuned to be 20 μm by means of external voltage and the size of QD. It is found that increasing the magnitude of far IR signal in the medium results in increase of optical probe signal absorption.