CMOS芯片
像素
物理
高能
光电子学
电气工程
工程物理
工程类
光学
标识
DOI:10.1016/j.nima.2014.07.017
摘要
Monolithic pixel detectors integrating sensor matrix and readout in one piece of silicon are only now starting to make their way into high energy physics.Two major requirements are radiation tolerance and low power consumption.For the most extreme radiation levels, signal charge has to be collected by drift from a depletion layer onto a designated collection electrode without losing the signal charge elsewhere in the in-pixel circuit.Low power consumption requires an optimization of Q/C, the ratio of the collected signal charge over the input capacitance [1].Some solutions to combine sufficient Q/C and collection by drift require exotic fabrication steps.More conventional solutions up to now require a simple in-pixel readout circuit.Both high voltage CMOS technologies and Monolithic Active Pixel Sensors (MAPS) technologies with high resistivity epitaxial layers offer high voltage diodes.The choice between the two is not fundamental but more a question of how much depletion can be reached and also of availability and cost.This paper tries to give an overview.
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