脱氧
锡
硅
材料科学
氧化物
接触电阻
氧化锡
氧化硅
冶金
无机化学
图层(电子)
复合材料
化学
氮化硅
作者
Takuya Futase,Kota Funayama,Naoto Hashikawa,Hiroshi Tobimatsu,Hirohiko Yamamoto,Hisanori Tanimoto
出处
期刊:International Reliability Physics Symposium
日期:2010-05-02
被引量:2
标识
DOI:10.1109/irps.2010.5488688
摘要
During Ti/TiN barrier metallization of a shared contact in SRAM, an NH 3 soak treatment selectively deoxidized silicon oxide on NiSi at the gate shoulder, improving the resistance of the contact. This deoxidizing NH 3 soak treatment drastically reduced the drawbacks of conventional NH 3 plasma treatment: plasma-induced damage of gate oxide and excessive nitridation of Ti/TiN. Although NH 3 gas does not kinetically deoxidize silicon oxide, it does selectively deoxidize silicon oxide on the NiSi. We think that this is because the NiSi surface promotes the deoxidization of silicon oxide by NH3.
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