兴奋剂
电导率
光电导性
材料科学
非晶硅
活化能
无定形固体
硅
大气温度范围
费米能级
凝聚态物理
分析化学(期刊)
电子
化学
光电子学
晶体硅
物理
物理化学
热力学
结晶学
量子力学
色谱法
作者
Warren S. Rehm,R. Fischer,J. Stuke,H. Wagner
标识
DOI:10.1002/pssb.2220790218
摘要
Abstract The photo and dark conductivity of boron‐ and phosphorus‐doped amorphous silicon is measured in the temperature range from 100 to 400 K, for various doping levels. Increasing doping generally decreases the activation energy of dark conductivity, down to 0.2 eV, and also decreases the σ 0 ‐value (extrapolation of dark conductivity for T → ∞). This lowering of σ 0 is explained by a temperature shift of the Fermi level plus a change in the conduction mechanism. The activation energy of photoconductivity is also lowered, at least by phosphorus doping, which is understood by an influence of doping on the tailing of the bands.
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