单层
堆积
范德瓦尔斯力
拉曼光谱
材料科学
化学气相沉积
光致发光
过渡金属
二硫化钼
联轴节(管道)
结晶学
纳米技术
化学
分子
光电子学
光学
物理
有机化学
催化作用
冶金
作者
Ming‐Hui Chiu,Mingyang Li,Wengjing Zhang,Wei‐Ting Hsu,Wen‐Hao Chang,Mauricio Terrones,Humberto Terrones,Lain‐Jong Li
出处
期刊:ACS Nano
[American Chemical Society]
日期:2014-09-07
卷期号:8 (9): 9649-9656
被引量:301
摘要
Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 °C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A21g for WSe2 (309 cm–1) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E″ for MoS2 at 286 cm–1 and A21g for MoS2 at around 463 cm–1 confirm the enhancement of the interlayer coupling.
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