发光二极管
铟
材料科学
光电子学
二极管
宽禁带半导体
作者
Chul Huh,W. J. Schaff,L.F. Eastman,Seong-Ju Park
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2004-02-01
卷期号:25 (2): 61-63
被引量:57
标识
DOI:10.1109/led.2003.822659
摘要
The temperature dependence of performance of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different indium compositions in the MQWs was investigated. With increasing In composition in the MQWs, the optical performance of the LEDs at room temperature was increased due to an increase in the localized energy states caused by In composition fluctuations in MQWs. As the temperature was increased, however, the decrease in output power for LED with a higher In composition in the MQWs was higher than that of LED with a lower In composition in the MQWs. This could be due to the increased nonradiation recombination through the high defect densities in the MQWs resulted from the increased accumulation of strain between InGaN well and GaN barrier.
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