Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures

Numerical simulations, with experimental validation, have been used to demonstrate that the 1.2-kVrated accumulation and inversion mode channel 4H-SiC split-gate MOSFETs (SG-MOSFETs) have superior highfrequency figures-of-merit (HF-FOM) at elevated temperatures up to 150 °C. The measured electrical characteristics are reported for the first time for devices fabricated in a 6" SiC manufacturing foundry. The accumulation mode SG-MOSFET provides a better on-resistance than that of the inversion mode SG-MOSFET due to a higher channel mobility resulting in 1.2x smaller HF-FOMs at both room temperature and 150 °C. The accumulation mode SG-MOSFET is demonstrated to have 2.4x and 2.1x smaller HF-FOM [R _ON x C _gd ] and HF-FOM [R _ON x Q _gd ] at 150 °C, respectively, compared with the typical commercially available MOSFET.