捷克先令
薄膜
材料科学
带隙
锌黄锡矿
电阻率和电导率
半导体
导带
苏打石灰玻璃
衰减系数
金属
分析化学(期刊)
吸收(声学)
光电子学
光学
化学
冶金
纳米技术
复合材料
量子力学
电子
工程类
物理
色谱法
电气工程
作者
Hironori Katagiri,Nobuyuki Sasaguchi,Shima Hando,Suguro Hoshino,Jiro Ohashi,Takaharu Yokota
标识
DOI:10.1016/s0927-0248(97)00119-0
摘要
By sulfurization of EB evaporated precursors, CZTS(Cu2ZnSnS4) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 104cm−1. The resistivity was in the the order of 104 Ω cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV.
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