Engineered linearity of GaN‐based HEMTs power devices by tailoring transfer characteristics

Abstract This paper presents an innovative method of increasing inherent linearity of GaN/AlGaN HEMT by tailoring the effective transconductance. The effective transconductance of the whole device is tailored by optimizing individual transconductance of subunits of the device. In this work GaN HEMT units were individually optimized with different recess depth. The unit cells with different recess dept were optimized such a way so that the resultant transfer characteristic is suitable for high linearity. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)