抖动
工艺变化
CMOS芯片
背景(考古学)
计算机科学
电气工程
频率漂移
频率补偿
电子工程
电压
工程类
锁相环
生物
古生物学
放大器
作者
M.S. McCorquodale,G.A. Carichner,J.D. O'Day,S.M. Pernia,S. Kubba,Eric D. Marsman,J. Kuhn,Richard B. Brown
出处
期刊:IEEE Transactions on Circuits and Systems I-regular Papers
[Institute of Electrical and Electronics Engineers]
日期:2009-05-01
卷期号:56 (5): 943-956
被引量:51
标识
DOI:10.1109/tcsi.2009.2016133
摘要
Recent trends in the development of integrated silicon frequency sources are discussed. Within that context, a 25-MHz self-referenced solid-state frequency source is presented and demonstrated where measured performance makes it suitable for replacement of crystal oscillators (XOs) in data interface applications. The frequency source is referenced to a frequency-trimmed and temperature-compensated 800-MHz free-running LC oscillator (LCO) that is implemented in a standard logic CMOS process and with no specialized analog process options. Mechanisms giving rise to frequency drift in integrated LCOs are discussed and supported by analytical expressions. Design objectives and a compensation technique are presented where several implementation challenges are uncovered. Fabricated in a 0.25-mum 1P5M CMOS process, and with no external components, the prototype frequency source dissipates 59.4 mW while maintaining plusmn152 ppm frequency inaccuracy over process, plusmn 10% variation in the power supply voltage, and from - 10degC to 80degC. Variation against other environmental factors is also presented. Nominal period jitter and power-on start-up latency are 2.75 ps rms and 268 mus, respectively. These performance metrics are compared with an XO at the same frequency.
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