Triaxial accelerometer design based on meso-piezoresistive effect
作者
Kun Huang,Tingdun Wen
出处
期刊:International Conference on Computer Application and System Modeling日期:2010-10-01卷期号:66: V13-332被引量:1
标识
DOI:10.1109/iccasm.2010.5622783
摘要
With the theory of meso-piezoresistive effect, we design a high sensitivity piezoresistive triaxial accelerometer. A three-mass dual-beam geometric micro-structure cavity can be designed by using GaAs / AlAs / InGaAs RTS film as sensitive element. After theoretical analysis and calculation of the sensitivity of this accelerometer and having compared with conventional silicon micro-accelerometer, we know the piezoresistive sensitivity of the RTS film that possesses the meso-piezoresistive effect is higher than the ordinary bulk silicon material. Building a reasonable bridge circuit can enhance the output voltage signal, The design of the same geometric size double cantilever in three axes may achieve the equal precision measurement in any direction.