Atomistic full-band simulations of monolayer MoS2 transistors

We study the transport properties of deeply scaled monolayer MoS2 n-channel\nmetal-oxide-semiconductor field effect transistors (MOSFETs) using full-band\nballistic quantum transport simulations with an atomistic tight-binding\nHamiltonian obtained from density functional theory. Our simulations suggest\nthat monolayer MoS2 MOSFETs can provide near-ideal subthreshold slope, and\nsuppression of drain-induced barrier lowering (DIBL) and gate-induced drain\nleakage (GIDL). However, these full-band simulations also exhibit limited\ntransconductance. These ballistic simulations also exhibit negative\ndifferential resistance (NDR) in the output characteristics associated with the\nnarrow width in energy of the lowest conduction band, but this NDR may be\nsubstantially reduced or eliminated by scattering in MoS2.\n