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Synthesis characterization of SnO2 nanofibers (NFs) and application of high-performing photodetectors based on SnO2 NFs/n-Si heterostructure

光电探测器 纳米纤维 材料科学 异质结 光电子学 表征(材料科学) 纳米技术
作者
Saba Khalili,Hossein Mahmoudi Chenari,Zeynep Orhan,Fatma Yıldırım,Şaki̇r Aydoğan
出处
期刊:Sensors and Actuators A-physical [Elsevier BV]
卷期号:342: 113631-113631 被引量:19
标识
DOI:10.1016/j.sna.2022.113631
摘要

We report a photodetector consisting of electrospun SnO 2 nanofibers (NFs) on an n-type Si wafer as the SnO 2 NFs/n-Si heterojunction architecture. The microstructure analysis of the SnO 2 NFs was determined by utilizing the advanced X-ray diffraction approach (WPPM). The DRS spectrum and detailed photoluminescence (PL) measurements have been carried out to study the optical properties. In addition, the current-voltage, frequency-dependent capacitance/conductance-voltage, and voltage-dependent capacitance-frequency measurements of the SnO 2 NFs/n-Si device were analyzed in the dark. From the dark I-V measurements, the rectification ratio, reverse current, ideality factor, and barrier height were determined as 19631 (at ± 2 V), ~2.5 × 10 −9 A (at - 2 V), 2.56, and 0.85 eV, respectively. Furthermore, the shunt resistance (Rsh) (at −2 V) and series resistance (Rs) (at +2 V) of the device were calculated as ~1.1 GΩ and ~2.8 kΩ, respectively from the dark I-V graphs. For the photodetector characteristics of the SnO 2 NFs/n-Si device, the light intensity-dependent I-V measurements ranged from 20 mW/cm 2 to 150 mW/cm 2 were carried out in visible light in addition to UV light (365 nm and 395 nm). Experimental Rsh and Rs were also determined as a function of light intensity. The device's ON/OFF ratio, the detectivity, and the responsivity reached as high as 9576, 1.38 × 10 11 Jones, and 0.66 A/W for 150 mW/cm 2 ., at − 1.5 V. • We fabricated a photodetector consisting of electrospun SnO 2 NFs on an n-type Si wafer as the SnO 2 NFs/n-Si architecture. • The characterization of the SnO 2 NFs was achieved by SEM, TGA, FT-IR, X-ray diffraction XRD, UV-Vis, DRS and PL. • The light intensity-dependent I-V measurements ranged from 20 mW/cm 2 to 150 mW/cm 2 were carried out. • The device's ON/OFF ratio, D* and R reached as high as 9334, 1.38×10 11 Jones and 0.66 A/W, respectively for 150 mW/cm 2 .
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