电阻随机存取存储器
计算机科学
可扩展性
瓶颈
并行计算
计算
图形
理论计算机科学
内存处理
计算机体系结构
算法
嵌入式系统
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物理化学
电极
数据库
化学
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作者
Saman Froehlich,Saeideh Shirinzadeh,Rolf Drechsler
摘要
Resistive Random Access Memory (ReRAM) is an emerging non-volatile memory technology. Besides its low power consumption and its high scalability, its inherent computation capabilities make ReRAM especially interesting for future computer architectures. Merging computations into the memory is a promising solution for overcoming the memory bottleneck. To perform computations in ReRAM, efficient synthesis strategies for Boolean functions have to be developed. In this article, we give a thorough presentation of how to employ parallel computing capabilities of ReRAM for the synthesis of functions given state-of-the-art graph-based representations AIGs or BDDs. Additionally, we introduce a new graph-based representation called m-And-Inverter Graph (m-AIGs), which allows us to fully exploit the computing capabilities of ReRAM. In the simulations, we show that our proposed approaches outperform state-of-the art synthesis strategies, and we show the superiority of m-AIGs over the standard AIG representation for ReRAM-based synthesis.
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