材料科学
光电子学
发光二极管
分子束外延
蓝宝石
晶格常数
铟镓氮化物
位错
化学气相沉积
外延
氮化铟
铟
氮化物
氮化镓
衍射
纳米技术
光学
复合材料
激光器
图层(电子)
物理
作者
Christian Wurm,Henry Collins,Nirupam Hatui,Weiyi Li,Shubhra S. Pasayat,Robert Hamwey,Kai Sun,Islam Sayed,Kamruzzaman Khan,Elaheh Ahmadi,S. Keller,Umesh K. Mishra
摘要
Achieving high-quality, relaxed InGaN substrates for longer-wavelength light emitting diodes (LEDs) is of great interest for the development of micro-LED based display technology. This work demonstrates molecular beam epitaxy (MBE)-grown In0.2Ga0.8N with a strain relaxation of 60% corresponding to an equivalently fully relaxed In composition of 12%. This was done by growing on a GaN-on-porous GaN pseudo-substrate (PS). The surface morphology of this film was found to be free of V-defects on the surface and with a threading dislocation density comparable to that of the GaN layers beneath. While InGaN grown on planar GaN-on-sapphire substrates remained nearly strained to the GaN underlayer, InGaN grown under identical conditions on PS displayed elastic-like relaxation. Furthermore, an increase in indium (In) composition was observed for the InGaN grown on PS. Where past work of InGaN grown on porous GaN PS by metalorganic chemical vapor deposition also resulted in relaxed InGaN templates suitable for device application, the surfaces of these relaxed films exhibited V-defects for thicker layers. Employing MBE, thicker films with higher In composition can be achieved with smooth surface morphology, thus enabling pseudo-substrates with a wide range of lattice constants. These pseudo-substrates of varying in-plane lattice constant are attractive for III-nitride based optoelectronics, particularly for green, amber, and red micro-LEDs.
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