Bandgap engineering of MoS2/MX2 (MX2 = WS2, MoSe2 and WSe2) heterobilayers subjected to biaxial strain and normal compressive strain
材料科学
带隙
光电子学
作者
Xiangying Su,Weiwei Ju,Ruizhi Zhang,Chongfeng Guo,Jiming Zheng,Yongliang Yong,Xiao‐Hong Li
出处
期刊：RSC Advances [Royal Society of Chemistry] 日期：2016-01-01卷期号：6 (22): 18319-18325被引量：45
标识
DOI：10.1039/c5ra27871f
摘要
Among MoS2/MX2 heterobilayers only the MoS2/WSe2 system exhibits a direct bandgap, and strain can be used to tune the direct bandgap character of the MoS2/MoSe2 and MoS2/WSe2 heterobilayers.
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