Field‐Effect Transistors: Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device (Adv. Mater. 44/2019)

In article number 1902576, Guanxin Zhang, Deqing Zhang, and co-workers demonstrate the application of a blend thin film of a conjugated semiconducting polymer and a hexaarylbiimidazole derivative to fabricate a photoresponsive/thermally responsive field-effect transistor. Such transistors can be utilized to fabricate photonically programmable and thermally erasable FET-based nonvoltaile memory devices with outstanding memory performance.