Pyramid textured Si{100} surface with low reflectivity in CMOS compatible solution

Wet anisotropic etching of Si{100} results in micro‐pyramids/hillocks bounded by four {111} planes. These kinds of geometrical structures are needed to reduce the front surface reflectance from silicon by taking multiple internal reflections of the incident ray and thus increase the efficiency of the solar cells. In this work, surface texturing of Si{100} is performed at different temperatures in a very low concentration CMOS compatible tetramethylammonium hydroxide (TMAH) without using any additive and agitation. The present research is aimed to significantly reduce the etching time in an extremely low concentration TMAH to texture the silicon surface for obtaining the lowest possible reflectance. Etching temperature is varied from 80 to 95°C with a step of 5°C. For each temperature, the etching time is also varied from 5 to 40 min with an interval of 5 min, whereas etching concentration is made a fix to 0.5 wt%. Surface morphology with dense and uniform pyramidal structures is achieved on the silicon samples etched at 85°C for 25 min. These samples provide the average solar weighted reflectance ( R sw ) of around 10% and the lowest reflectance of 6.7% at 790 nm.