感应耦合等离子体
物理
偏压
等离子体
射频功率放大器
无线电频率
原子物理学
电压
等离子体参数
分析化学(期刊)
化学
光电子学
电气工程
核物理学
工程类
量子力学
CMOS芯片
放大器
色谱法
作者
Ho-Won Lee,Kyung-Hyun Kim,Jong In Seo,Chin‐Wook Chung
摘要
Changing the RF bias is widely used to control the ion energy in inductively coupled plasma (ICP). Here, the plasma densities were measured using the floating harmonic method at various ICP powers and RF bias power frequencies. It is observed that there is an RF bias power (PB,min) that minimizes the plasma density. With increasing ICP power, PB,min is increased. When the frequency is changed from 12.5 MHz to 2 MHz, PB,min is decreased. To understand this phenomenon, the relative variation of the plasma density (δn) with the RF bias power is considered based on a power balance equation. PB,min is determined by δn, and δn changes based on the self-bias voltage caused by the RF bias power. Because the self-bias voltages change depending on the ICP power and frequency of the RF bias power, PB,min is shifted by altering the ICP power and the RF bias power frequency. The results are in good agreement with the experimental results.
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