Ferrimagnetic semiconductor with a direct bandgap

The direct bandgap nature of semiconductors is crucial for a wide range of optoelectronic devices and energy applications. These materials are mainly concentrated in hybrid organic–inorganic halide perovskites, III–V semiconductors, and monolayer transition metal dichalcogenides. Here, we report an AA′3B2B′2O12-type direct bandgap semiconductor CaCu3Fe2Ta2O12 using spin-polarized density functional theory calculations. The formation energy indicates that this material is thermodynamically preferred under a high-temperature and high-pressure synthetic route, similar to the analog CaCu3Fe2Nb2O12. Effective ferrimagnetic interaction occurs through the antiferromagnetic coupling between the A-site Cu and B-site Fe. More importantly, CaCu3Fe2Ta2O12 exhibits semiconducting behavior with a direct bandgap in the visible range, suggesting that AA′3B2B′2O12-type quadruple perovskites are potential candidate materials in photovoltaics as well as in optoelectronic devices.