亮度
光电子学
材料科学
二极管
电致发光
降级(电信)
电子迁移率
发光二极管
有机发光二极管
量子点
瞬态(计算机编程)
量子效率
图层(电子)
光学
物理
复合材料
电信
计算机科学
操作系统
作者
Takahiro Doe,Keisuke Kitano,Satoru Yamamoto,Masaki Yamamoto,Kazuki Goto,Yusuke Sakakibara,Tadashi Kobashi,Hirohisa Yamada,Masaya Ueda,Tatsuya Ryowa,Makoto Izumi,Yasuhiko Arakawa
摘要
In this study, we evaluated the degradation mechanism in quantum dot light-emitting diodes (QLEDs) to improve the device lifetime. We measured the hole mobility using the delay time of transient electroluminescence for three types of hole transport layer (HTL) materials. In addition, we estimated the degradation of luminance efficiency and hole mobility under constant current drive. As a result, the HTL material with a higher hole mobility yielded longer QLED device lifetimes. Through substitution of the HTL material from poly (9-vinylcarbazole) (PVK) to poly [(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)] (TFB), the hole mobility and the 95% luminance lifetime from initial luminance improved from 0.5 × 10−5 cm2/V⋅s and 2.90 h at J = 10 mA/cm2 to 1.1 × 10−5 cm2/V⋅s and 179 h, respectively. Moreover, we clarified that the degradation of the luminescent efficiency is correlated with the hole mobility.
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