Assessing boron quantification and depth profiling of different boride materials using ion beams

We assessed the capability to quantify and depth profile boron in different materials by a number of ion beam-based techniques. Specifically, the depth resolution, probing depth, film homogeneity, and detection limit for boron using particle-particle nuclear reaction analysis (resonant and non-resonant mode), elastic backscattering spectrometry, and time-of-flight elastic recoil detection analysis using heavy primary ions were evaluated. Samples consisted of high and low-Z materials implanted by 11B+ at different energies and fluences, Au/BN structures as well as bulk boride targets. Advantages and limitations for the individual techniques for the different sample types are discussed. As an example, while ToF-ERDA allows to efficiently depth profile 10B and 11B individually, limitations in probing depth and depth resolution, as well as quantification are apparent in particular for target materials containing high-Z species. While EBS presents large probing depth (~14 μm), the best detection limit (~0.1 × 1015/cm2) is obtained from resonant-NRA.