材料科学
卤化物
钙钛矿(结构)
光电子学
神经形态工程学
纳米技术
光子学
记忆电阻器
数码产品
离子键合
作者
Runsheng Gao,Xiaojian Zhu,Xiaohan Meng,Xuerong Liu,Shiping Guo,Quanxing Yao,Guozhi Chai,Jinshui Miao,Hongwei Tan,Run‐Wei Li
标识
DOI:10.1002/adma.202519199
摘要
With the rise of technologies such as artificial vision, smart wearables, and interactive displays, the demand for high-performance, intelligent, and portable optoelectronic devices has increased significantly. However, conventional silicon-based optoelectronic devices face limitations in perceiving, processing, and feeding back optoelectrical information, making them unable to meet increasing demanding performance requirements. Conversely, halide perovskites, characterized by excellent optoelectronic properties and high structural tunability, show great potential for advanced next-generation optoelectronic applications. Recent studies have revealed diverse ionic and electronic behaviors that are crucial for achieving essential physical properties in the design of emerging optoelectronic devices. This review discusses the ionotronic mechanisms of halide perovskites and elucidates how these mechanisms enable high photosensitivity, tunable conductivity, and efficient luminescence. Recent developments in emerging photodetectors, neuromorphic processors, and full-color displays are discussed for intelligent applications. Additionally, the prospects and challenges of ionotronics-driven halide perovskite-based optoelectronic devices are evaluated.
科研通智能强力驱动
Strongly Powered by AbleSci AI