阴极发光
合金
缓冲器(光纤)
材料科学
作文(语言)
衍射
带隙
鞠躬
化学成分
光致发光
分析化学(期刊)
光电子学
光学
化学
发光
复合材料
计算机科学
物理
语言学
有机化学
色谱法
哲学
神学
电信
作者
Kagiso Loeto,Gunnar Kusch,Saptarsi Ghosh,Martin Frentrup,A. Hinz,Rachel A. Oliver
标识
DOI:10.1002/pssa.202200830
摘要
Herein, the use of cathodoluminescence (CL) hyperspectral mapping in the quantification of the AlGaN alloy composition in graded buffer structures is explored. The quantification takes advantage of the known parabolic dependence of the AlGaN bandgap on the alloy composition allowing the AlGaN near‐band‐edge (NBE) emission energy recorded from CL to be converted to a composition. The proposed quantification method is first applied to cleaved cross‐sections of two nominally step‐graded AlGaN buffer structures each containing five AlGaN layers with different compositions. By comparing the compositions obtained from CL to those calculated using X‐ray diffraction, a close agreement between values from both techniques is observed. However, due to a change in the bowing parameter, some deviation is observed for layers with compositions near 75%. The method is then applied to cleaved cross‐sections of an AlGaN buffer whose group III precursor flow molar ratio is varied linearly throughout the growth. Herein, the hyperspectral nature of the CL datasets is exploited such as to produce composition maps by converting the relevant AlGaN‐NBE emission energy at each pixel of the CL data to a composition.
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