超级电容器
石墨烯
材料科学
重量分析
碳纤维
电容
兴奋剂
化学工程
石墨
硫黄
储能
纳米技术
功率密度
扫描电子显微镜
电极
光电子学
复合材料
化学
有机化学
复合数
功率(物理)
工程类
物理化学
物理
冶金
量子力学
作者
Yining He,Di Wang,Yuxin Fu,Qiong Li,Ming Jiang,Chengen He,Jing Huang
标识
DOI:10.1002/ente.202300026
摘要
Herein, sulfur‐doped graphite film (SGF) is developed by a facile method. Graphene oxide (GO) film and low‐cost NaHSO 3 are used for carbon and sulfur sources, respectively. A single‐step sulfur doping reaction is used to obtain SGF at 180 °C. The scanning electron microscopy (SEM) analysis of SGF reveals highly loose, highly crumpled characteristics. The SEM–energy‐dispersive spectroscopy shows that S is evenly distributed on the surface of SGF and doping amount of S is 4.6 wt%. SGF can attain high gravimetric and areal specific capacitance of 232.8 F g −1 and 672.5 mF cm −2 at 0.5 A g −1 and 1 mA cm −2 current density, respectively. The SGF shows excellent cycle stability (94.1% capacity retention after 10 000 cycles at 2.0 mA cm −2 ). Then, the assembled flexible SGF//SGF all‐solid‐state symmetric supercapacitor device can deliver a high energy density of 12.17 Wh kg −1 at a power density of 499.85 kW kg −1 . The in situ doping method provides a simplistic and low‐cost synthesis process, which is suitable for large‐scale production of SGF. Furthermore, the well‐developed approach is applied to prepare arbitrary S‐doped matrix of carbon. Simultaneously, the fabricated SGF as the electrode material of flexible supercapacitor devices has great advantages in wearable electronics.
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